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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitter CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base Open collector OND IC TOR UC VALUE 200 200 6 17 5 UNIT V V V A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 200 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=8A ; VCE=4V IC=1A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 MIN 200 2SC3858 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.5 100 100 180 |I |I V A A MHz pF 300 Switching times ton ts tf Turn-on time Fall time Storage time hFE classifications Y 50-100 P 70-140 CHA IN G E SEM NG IC=10A;RL=4| IB1=- IB2=1A VCC=40V OND IC TOR UC 0.50 |I 1.80 0.60 |I s |I s s 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3858 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 CHA IN E SEM NG OND IC TOR UC 4 |
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